BJT Voltage Amplifiers

The board affords the problems associated to the use of the transistors in the three basic configurations: CE (Common Emitter), CC (Common Collector) and CB (Common Base). The board allows a first approach to the theoretical  practical study of the static and dynamic operation of the BJT (Base emitter Junction Transistor), used as a voltage amplifier. Firstly, the  bias and the working point stabilization problems are considered. Then, the typical features of the three configurations are analyzed: input resistance, output resistance, voltage gain and current gain. The board is supplied complete with a set of stackable, plug in cables of suitable lengths and colours and with a training manual. In the second section of the board typical applications are studied, such as the bootstrap effect bias and the Darlington connection.

Experiments of BJT Voltage Amplifiers
Measurement of typical parameters in the three configurations
Dual load amplifier with phase inverter function
Bias and dc load line in CE, CC and CB configurations
Analysis and checking of Darlington connection
Emitter follower and bootstrap effect bias.